Panasonic MA4X726 (MA726) Specification Sheet

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Brand: Panasonic

Category: Network Card

Type: Specification sheet for Panasonic MA4X726 (MA726)

Pages: 3 (0.21 Mb)

Download Panasonic MA4X726 (MA726) Specification sheet

Panasonic MA4X726 (MA726) Specification sheet - Page 1
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Panasonic MA4X726 (MA726) Specification sheet - Page 2
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Panasonic MA4X726 (MA726) Specification sheet - Page 3
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Schottky Barrier Diodes (SBD)
1
Publication date: February 2005 SKH00106CED
Internal Connection
Marking Symbol: M1O
MA4X726 (MA726)
Silicon epitaxial planar type
For super high speed switching
For small current rectification
Features
Two isolated elements are contained in one package, allowing
high-density mounting
Two MA3X721 (MA721) is contained in one package (two
diodes in a different direction)
Forward current (Average) I
F(AV)
= 200 mA rectification is
possible
Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Reverse voltage V
R
30 V
Repetitive peak reverse voltage V
RRM
30 V
Peak forward Single I
FM
300 mA
current Series
*
1
225
Forward current Single I
F(AV)
200 mA
(Average) Series
*
1
150
Non-repetitive peak Single I
FSM
1.00 A
forward surge current
*
2
Series
*
1
0.75
Junction temperature T
j
150 °C
Storage temperature T
stg
55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
F
I
F
= 200 mA 0.55 V
Reverse current I
R
V
R
= 30 V 50 µA
Terminal capacitance C
t
V
R
= 0 V, f = 1 MHz 30 pF
Reverse recovery time
*
t
rr
I
F
= I
R
= 100 mA 3.0 ns
I
rr
= 10 mA, R
L
= 100
Electrical Characteristics T
a
= 25°C ± 3°C
4
1
3
2
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
= 50
Wave Form Analyzer
(SAS-8130)
R
i
= 50
t
p
= 2 µs
t
r
= 0.35 ns
δ = 0.05
I
F
= 100 mA
I
R
= 100 mA
R
L
= 100
10%
Input Pulse Output Pulse
I
rr
= 10 mA
t
r
t
p
t
rr
V
R
I
F
t
t
A
Unit: mm
1: Cathode 1
2: Anode 2
3: Cathode 2
4: Anode 1
EIAJ: SC-61 Mini4-G1 Package
2.90
+0.02
–0.05
0.16
+0.1
–0.06
0.4
±0.2
10˚
0.60
+0.10
–0.05
1.1
+0.2
–0.1
1.1
+0.3
–0.1
1.50
+0.25
–0.05
2.8
+0.2
–0.3
1.9
±0.2
(0.65)
(0.2)
(0.95)(0.95)
0 to 0.1
34
21
0.5R
Note)
*
1: Value of each diode in series diodes used.
*
2:
The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 1 GHz. 4.
*
: t
rr
measurement circuit
Note) The part number in the parenthesis shows conventional part number.
This product complies with the RoHS Directive (EU 2002/95/EC).