HP PhotoSmart 335 Owner's Manual

Download Specifications of HP PhotoSmart 335 Printer for Free or View it Online on All-Guides.com.

Brand: HP

Category: Printer

Type: Specifications for HP PhotoSmart 335

Pages: 8

Download HP PhotoSmart 335 Specifications

HP PhotoSmart 335 Specifications - Page 1
1
HP PhotoSmart 335 Specifications - Page 2
2
HP PhotoSmart 335 Specifications - Page 3
3
HP PhotoSmart 335 Specifications - Page 4
4
HP PhotoSmart 335 Specifications - Page 5
5
HP PhotoSmart 335 Specifications - Page 6
6
HP PhotoSmart 335 Specifications - Page 7
7
HP PhotoSmart 335 Specifications - Page 8
8
IRF1104
PRELIMINARY
HEXFET
®
Power MOSFET
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
S
D
G
Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 100
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 71 A
I
DM
Pulsed Drain Current 400
P
D
@T
C
= 25°C Power Dissipation 170 W
Linear Derating Factor 1.11 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
E
AS
Single Pulse Avalanche Energy 350 mJ
I
AR
Avalanche Current 60 A
E
AR
Repetitive Avalanche Energy 17 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
Absolute Maximum Ratings
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 0.90
R
θCS
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
R
θJA
Junction-to-Ambient ––– 62
Thermal Resistance
V
DSS
= 40V
R
DS(on)
= 0.009
I
D
= 100A
TO-220AB
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
4/24/98
www.irf.com 1
PD- 9.1724A